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DWM2F100N120

DWM2F100N120

DWM2F100N120

MagnaChip Semiconductor

SOT-23

DWM2F100N120 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 320
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 200
Peak Non-Repetitive Surge Current (A) 2000
Peak Forward Voltage (V) 1.3@100A
Peak Reverse Current (uA) 1000
Maximum Power Dissipation (mW) 300000
Peak Reverse Recovery Time (ns) 120
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
AEC Qualified Unknown
Standard Package Name SOT-227
Supplier Package SOT-227
Military No
Mounting Screw
Package Height 9.8
Package Length 38.5
Package Width 24.9
PCB changed 4
Part Status Obsolete
Type Switching Diode
Pin Count 4
Configuration Dual Parallel
RoHS Status Supplier Unconfirmed
DWM2F100N120 Product Details

DWM2F100N120 Overview


In the datasheets, 1.3@100A is stated as the peak forward voltage.A continuous forward current of 200 is the maximum consumption of this device.RF diode is necessary to operate the device at a DC reverse voltage below 320.

DWM2F100N120 Features


the forward peak voltage is 1.3@100A


DWM2F100N120 Applications


There are a lot of MagnaChip Semiconductor
DWM2F100N120 applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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