STGD5H60DF Description


These devices are IGBTs developed using an advanced proprietary trench gate field stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in a safer paralleling operation.

STGD5H60DF Features

? High-speed switching

? Tight parameter distribution

? Safe paralleling

? Low thermal resistance

? Short-circuit rated

? Ultrafast soft recovery antiparallel diode


STGD5H60DF Applications

? Motor control

? UPS

? PFC