MPSA13-AP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website
SOT-23
MPSA13-AP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Power - Max
1.5W
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
125MHz
Frequency - Transition
125MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MPSA13-AP Product Details
MPSA13-AP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.As you can see, the part has a transition frequency of 125MHz.Collector Emitter Breakdown occurs at 30VV - Maximum voltage.
MPSA13-AP Features
the DC current gain for this device is 10000 @ 100mA 5V the vce saturation(Max) is 1.5V @ 100μA, 100mA a transition frequency of 125MHz
MPSA13-AP Applications
There are a lot of Micro Commercial Co MPSA13-AP applications of single BJT transistors.