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TIP112-BP

TIP112-BP

TIP112-BP

Micro Commercial Co

TIP112-BP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website

SOT-23

TIP112-BP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number TIP112
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 50W
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 4V
Current - Collector Cutoff (Max) 2mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 2A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.38000 $1.38
10 $1.22700 $12.27
25 $1.11680 $27.92
100 $0.98790 $98.79
250 $0.87764 $219.41
500 $0.78576 $392.88
TIP112-BP Product Details

TIP112-BP Overview


This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The device exhibits a collector-emitter breakdown at 100V.

TIP112-BP Features


the DC current gain for this device is 1000 @ 1A 4V
the vce saturation(Max) is 2.5V @ 8mA, 2A

TIP112-BP Applications


There are a lot of Micro Commercial Co TIP112-BP applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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