AT28C256-25FM/883-815

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Manufacturer part number:AT28C256-25FM/883-815

Manufacturer:Microchip Technology

Description:Memory IC 18.285mm mm

Case Package:SOT-23

Datasheet:AT28C256-25FM/883-815 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Mounting Type	Surface Mount
Package / Case	28-CFlatPack
Surface Mount	YES
Operating Temperature	-55°C~125°C TC
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	28
Additional Feature	AUTOMATIC WRITE
Technology	CMOS
Voltage - Supply	4.5V~5.5V
Terminal Position	DUAL
Number of Functions	1
Supply Voltage	5V
Terminal Pitch	1.27mm
JESD-30 Code	R-CDFP-F28
Supply Voltage-Max (Vsup)	5.5V
Supply Voltage-Min (Vsup)	4.5V
Memory Size	256Kb 32K x 8
Memory Type	Non-Volatile
Operating Mode	ASYNCHRONOUS
Access Time	250ns
Memory Format	EEPROM
Memory Interface	Parallel
Organization	32KX8
Memory Width	8
Write Cycle Time - Word, Page	10ms
Memory Density	262144 bit
Screening Level	MIL-STD-883 Class C
Programming Voltage	5V
Write Cycle Time-Max (tWC)	10ms
Height Seated (Max)	3.02mm
Length	18.285mm
Width	10.16mm
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
15	$146.00267	$2190.04005

AT28C256-25FM/883-815 Overview

As far as its memory type goes, it falls into the Non-Volatile category. There is a Tube case available. In the case of 28-CFlatPack, it is embedded within the case. A memory chip with a capacity of 256Kb 32K x 8 is used on this device. This device uses takes advantage of the EEPROM format. A wide operating temperature range makes this device ideal for a variety of demanding applications. The supply voltage can be up to 4.5V~5.5V. It is recommended to mount it in the Surface Mount mounting type. On the chip, there are 28 terminations. As many as 1 functions are supported for comprehensive working. In order to power this memory device, 5V will be necessary. Although it has all the merits this chip has, it is also equipped with AUTOMATIC WRITE to give a performance boost to the system. There is a need for a programming voltage of 5V in order to modify the state of some nonvolatile memory arrays.