Surface Mount Tape & Reel (TR) Active Gate Drivers ICs Non-Inverting 2 8-WFDFN Exposed Pad High-Side or Low-Side
SOT-23
MCP14A0902T-E/MNY Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Surface Mount
Package / Case
8-WFDFN Exposed Pad
Operating Temperature
-40°C~125°C TA
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Supply
4.5V~18V
Input Type
Non-Inverting
Rise / Fall Time (Typ)
22ns 22ns
Interface IC Type
BUFFER OR INVERTER BASED MOSFET DRIVER
Channel Type
Synchronous
Number of Drivers
2
Driven Configuration
High-Side or Low-Side
Gate Type
N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink)
9A 9A
Logic Voltage - VIL, VIH
0.8V 2V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.773000
$1.773
10
$1.672642
$16.72642
100
$1.577964
$157.7964
500
$1.488645
$744.3225
1000
$1.404382
$1404.382
MCP14A0902T-E/MNY Product Details
MCP14A0902T-E/MNY Overview
A higher level of flexibility is provided by its 8-WFDFN Exposed Pad package.A packaging method of Tape & Reel (TR) is indicated.For its configuration, it incorporates 2 drivers.Surface Mount is the way in which it is mounted.WGate driversh a 4.5V~18V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.A gate type of N-Channel, P-Channel MOSFET is used in its design.For this device, the temperature range is -40°C~125°C TA.Non-Inverting is used as its input type.The interface IC is referred to as BUFFER OR INVERTER BASED MOSFET DRIVER.
MCP14A0902T-E/MNY Features
Embedded in the Tape & Reel (TR) package 2 drivers Employing a gate type of N-Channel, P-Channel MOSFET
MCP14A0902T-E/MNY Applications
There are a lot of Microchip Technology MCP14A0902T-E/MNY gate drivers applications.
Topologies
Uninterruptible Power Supplies (UPS)
Active Clamp Flyback or Forward and Synchronous Rectifier
Refrigerator
High frequency line drivers
Broadcast equipment
Commercial and agricultural vehicles (CAV)
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,