Automotive, AEC-Q100, SST26 SQI? Memory IC Automotive, AEC-Q100, SST26 SQI? Series 6mm mm
SOT-23
SST26VF016B-104V/MF70SVAO Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-WDFN Exposed Pad
Surface Mount
YES
Operating Temperature
-40°C~105°C TA
Packaging
Tube
Series
Automotive, AEC-Q100, SST26 SQI®
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
8
Technology
CMOS
Voltage - Supply
2.7V~3.6V
Terminal Position
DUAL
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
1.27mm
Reach Compliance Code
compliant
JESD-30 Code
R-PDSO-N8
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
16Mb 2M x 8
Memory Type
Non-Volatile
Operating Mode
SYNCHRONOUS
Clock Frequency
104MHz
Memory Format
FLASH
Memory Interface
SPI - Quad I/O
Organization
16MX1
Memory Width
1
Write Cycle Time - Word, Page
1.5ms
Memory Density
16777216 bit
Screening Level
AEC-Q100; TS 16949
Parallel/Serial
SERIAL
Programming Voltage
3V
Height Seated (Max)
0.8mm
Length
6mm
Width
5mm
SST26VF016B-104V/MF70SVAO Product Details
SST26VF016B-104V/MF70SVAO Overview
Non-Volatile is its memory type. It is supplied votage within Tube. Embedded in the 8-WDFN Exposed Pad case, memory ics is a single file. It is estimated that the memory size on the chip is 16Mb 2M x 8. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. A wide operating temperature range makes this device ideal for a variety of demanding applications. The supply voltage can be up to 2.7V~3.6V. Its recommended mounting type is Surface Mount. A total of 8 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 3V will be necessary. A clock frequency rotation within 104MHz is used for the ic memory chip to rotate data. Among the Automotive, AEC-Q100, SST26 SQI? series of memory devices, this part is essential for its applications. A programming voltage of 3V is required to change a nonvolatile memory array's state.
SST26VF016B-104V/MF70SVAO Features
Package / Case: 8-WDFN Exposed Pad
SST26VF016B-104V/MF70SVAO Applications
There are a lot of Microchip Technology SST26VF016B-104V/MF70SVAO Memory applications.