PIN - Single 3pF @ 100V, 1MHz - SILICON NOT SPECIFIED AXIAL Axial
SOT-23
UM4010B Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Surface Mount
NO
Package / Case
Axial
Supplier Device Package
Axial
Diode Element Material
SILICON
Number of Terminals
2
HTS
8541.10.00.80
Maximum Reverse Voltage (V)
1000
Maximum Forward Voltage (V)
1@100mA
Maximum Series Resistance @ Maximum IF (Ohm)
0.5@100mA
Maximum Diode Capacitance (pF)
3@100V
Maximum Power Dissipation (mW)
100000000
Typical Carrier Life Time (us)
10
Standard Package Name
Style B
Supplier Package
Style B
Military
No
Mounting
Through Hole
Package Length
7.62(Max)
PCB changed
2
Package
Tape & Reel (TR)
Mfr
Microchip Technology
Power Dissipation (Max)
12 W
Product Status
Active
Package Shape
ROUND
Manufacturer
Microsemi Corporation
ECCN (US)
EAR99
Operating Temperature
-
Series
-
JESD-609 Code
e0
Pbfree Code
No
ECCN Code
EAR99
Type
Attenuator|Switch
Terminal Finish
TIN LEAD
Additional Feature
LOW DISTORTION
HTS Code
8541.10.00.80
Subcategory
PIN Diodes
Technology
POSITIVE-INTRINSIC-NEGATIVE
Terminal Position
AXIAL
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Pin Count
2
JESD-30 Code
O-XALF-W2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
Single
Power Dissipation-Max
2.5 W
Diode Type
PIN - Single
Case Connection
ISOLATED
Application
ATTENUATOR; SWITCHING
Capacitance @ Vr, F
3pF @ 100V, 1MHz
Frequency Range
HF|S
Voltage - Peak Reverse (Max)
100V
Breakdown Voltage-Min
1000 V
Reverse Test Voltage
100 V
Frequency Band
HIGH FREQUENCY TO S BAND
Diode Capacitance-Nom
3 pF
Resistance @ If, F
500mOhm @ 100mA, 100MHz
Diode Capacitance-Max
3 pF
Minority Carrier Lifetime-Nom
10 µs
Diode Res Test Current
100 mA
Diode Res Test Frequency
100 MHz
Diode Forward Resistance-Max
0.5 Ω
Diameter
3.68(Max)
RoHS Status
RoHS non-compliant
UM4010B Product Details
UM4010B Overview
This device can consume a maximum reverse voltage of about 1000.A maximum reverse voltage of 100V is specified in the applicable device specifications.The device may occasionally run at its lowest breakdown voltage.Reverse test voltages within 100 V are required for a valid conversion result.
UM4010B Features
at its lowest breakdown voltage of 1000 V
UM4010B Applications
There are a lot of Microchip Technology UM4010B applications of RF diodes.