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UM4010B

UM4010B

UM4010B

Microchip Technology

PIN - Single 3pF @ 100V, 1MHz - SILICON NOT SPECIFIED AXIAL Axial

SOT-23

UM4010B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountNO
Package / Case Axial
Supplier Device Package Axial
Diode Element Material SILICON
Number of Terminals 2
HTS 8541.10.00.80
Maximum Reverse Voltage (V) 1000
Maximum Forward Voltage (V) 1@100mA
Maximum Series Resistance @ Maximum IF (Ohm) 0.5@100mA
Maximum Diode Capacitance (pF) 3@100V
Maximum Power Dissipation (mW) 100000000
Typical Carrier Life Time (us) 10
Standard Package Name Style B
Supplier Package Style B
Military No
Mounting Through Hole
Package Length 7.62(Max)
PCB changed 2
Package Tape & Reel (TR)
Mfr Microchip Technology
Power Dissipation (Max) 12 W
Product Status Active
Package Shape ROUND
Manufacturer Microsemi Corporation
ECCN (US) EAR99
Operating Temperature-
Series -
JESD-609 Code e0
Pbfree Code No
ECCN Code EAR99
Type Attenuator|Switch
Terminal Finish TIN LEAD
Additional FeatureLOW DISTORTION
HTS Code8541.10.00.80
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position AXIAL
Terminal FormWIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count2
JESD-30 Code O-XALF-W2
Qualification StatusNot Qualified
Number of Elements 1
Configuration Single
Power Dissipation-Max 2.5 W
Diode Type PIN - Single
Case Connection ISOLATED
Application ATTENUATOR; SWITCHING
Capacitance @ Vr, F 3pF @ 100V, 1MHz
Frequency RangeHF|S
Voltage - Peak Reverse (Max) 100V
Breakdown Voltage-Min 1000 V
Reverse Test Voltage 100 V
Frequency Band HIGH FREQUENCY TO S BAND
Diode Capacitance-Nom 3 pF
Resistance @ If, F 500mOhm @ 100mA, 100MHz
Diode Capacitance-Max 3 pF
Minority Carrier Lifetime-Nom 10 µs
Diode Res Test Current 100 mA
Diode Res Test Frequency 100 MHz
Diode Forward Resistance-Max 0.5 Ω
Diameter 3.68(Max)
RoHS StatusRoHS non-compliant
In-Stock:2166 items

UM4010B Product Details

UM4010B Overview


This device can consume a maximum reverse voltage of about 1000.A maximum reverse voltage of 100V is specified in the applicable device specifications.The device may occasionally run at its lowest breakdown voltage.Reverse test voltages within 100 V are required for a valid conversion result.

UM4010B Features


at its lowest breakdown voltage of 1000 V


UM4010B Applications


There are a lot of Microchip Technology
UM4010B applications of RF diodes.


  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes

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