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MT25TL512HBA8ESF-0AAT

MT25TL512HBA8ESF-0AAT

MT25TL512HBA8ESF-0AAT

Micron Technology Inc.

Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 10.3mm mm

SOT-23

MT25TL512HBA8ESF-0AAT Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295, 7.50mm Width)
Surface Mount YES
Operating Temperature -40°C~105°C TA
Packaging Tube
Series Automotive, AEC-Q100
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 16
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1.27mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G16
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 512Mb 64M x 8
Memory Type Non-Volatile
Operating Mode SYNCHRONOUS
Clock Frequency 133MHz
Memory Format FLASH
Memory Interface SPI
Organization 64MX8
Memory Width 8
Write Cycle Time - Word, Page 8ms, 2.8ms
Memory Density 536870912 bit
Parallel/Serial SERIAL
Programming Voltage 3V
Alternate Memory Width 1
Height Seated (Max) 2.65mm
Length 10.3mm
Width 7.5mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,440 $5.97713 $5.97713
MT25TL512HBA8ESF-0AAT Product Details

MT25TL512HBA8ESF-0AAT Overview


In this case, the memory type of the device can be classified as Non-Volatile. Tube-cases are available. In the case of 16-SOIC (0.295, 7.50mm Width), it is embedded within the case. There is 512Mb 64M x 8 of memory on the chip. FLASH-format memory is used in this device, which is a mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. It is recommended that the mounting type be Surface Mount. As you can see from the diagram, the chip is planted with 16 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3V is required for the operation of this memory device. It has a clock frequency of 133MHz. This part plays an important role in applications that target the Automotive, AEC-Q100 series of memory devices. A programming voltage of 3V is required to change a nonvolatile memory array's state.

MT25TL512HBA8ESF-0AAT Features


Package / Case: 16-SOIC (0.295, 7.50mm Width)

MT25TL512HBA8ESF-0AAT Applications


There are a lot of Micron Technology Inc. MT25TL512HBA8ESF-0AAT Memory applications.

  • personal digital assistants
  • networking
  • printers
  • telecommunications
  • eSRAM
  • eDRAM
  • DVD disk buffer
  • nonvolatile BIOS memory
  • graphics card
  • personal computers

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