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MT28F800B3SG-9 TET

MT28F800B3SG-9 TET

MT28F800B3SG-9 TET

Micron Technology Inc.

3.3V V 44 Pin Memory IC MT28F800B3 28.02mm mm

SOT-23

MT28F800B3SG-9 TET Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 44-SOIC (0.496, 12.60mm Width)
Surface Mount YES
Operating Temperature -40°C~85°C TA
Packaging Tube
Published 2002
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 44
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature 100,000 ERASE CYCLES; TOP BOOT BLOCK
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 3V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 235
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 1.27mm
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MT28F800B3
Pin Count 44
JESD-30 Code R-PDSO-G44
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 3.6V
Power Supplies 3.3V
Supply Voltage-Min (Vsup) 3V
Memory Size 8Mb 1M x 8 512K x 16
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Supply Current-Max 0.025mA
Memory Format FLASH
Memory Interface Parallel
Organization 512KX16
Memory Width 16
Write Cycle Time - Word, Page 90ns
Standby Current-Max 0.000005A
Memory Density 8388608 bit
Access Time (Max) 90 ns
Programming Voltage 3V
Endurance 100000 Write/Erase Cycles
Alternate Memory Width 8
Data Polling NO
Toggle Bit NO
Command User Interface YES
Number of Sectors/Size 1217
Sector Size 16K8K96K128K
Boot Block TOP
Height Seated (Max) 2.8mm
Length 28.02mm
Width 12.6mm
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $4.60776 $2303.88
MT28F800B3SG-9 TET Product Details

MT28F800B3SG-9 TET Overview


In this case, the memory type of the device can be classified as Non-Volatile. In addition, memory ics is available in a Tube case as well. The file is embedded in a 44-SOIC (0.496, 12.60mm Width) case. A memory chip with a capacity of 8Mb 1M x 8 512K x 16 is used on this device. As with most mainstream devices, this one uses FLASH-format memory. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. With 3V~3.6V as the supply voltage, it is capable of handling memory ics. Its recommended mounting type is Surface Mount. It is planted on the chip with 44 terminations. In total, this part supports 1 functions. The memory device designed for this application has been designed to be powered by an 3.3V power supply. MT28F800B3, as the device's base part number, is frequently referred in order to select similar parts. This memory device has 44 pins, indicating it has 44 memory locations. The memory chip also offers 100,000 ERASE CYCLES; TOP BOOT BLOCK to level up system performance despite its merits. As for the power supply, this memory chip only needs 3.3V . This device can be operated from a maximum supply current of 0.025mA under ideal conditions. A programming voltage of 3V is needed to alter the state of certain nonvolatile memory arrays. The manufacturer has divided this memory into 1217 different sections that have specific sizes in total.

MT28F800B3SG-9 TET Features


Package / Case: 44-SOIC (0.496, 12.60mm Width)
Additional Feature:100,000 ERASE CYCLES; TOP BOOT BLOCK

MT28F800B3SG-9 TET Applications


There are a lot of Micron Technology Inc. MT28F800B3SG-9 TET Memory applications.

  • personal computers
  • printers
  • personal digital assistants
  • workstations,
  • mainframes
  • main computer memory
  • Camcorders
  • embedded logic
  • cell phones
  • eDRAM

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