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MT29E1HT08ELHBBG1-3ES:B TR

MT29E1HT08ELHBBG1-3ES:B TR

MT29E1HT08ELHBBG1-3ES:B TR

Micron Technology Inc.

Memory IC

SOT-23

MT29E1HT08ELHBBG1-3ES:B TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Operating Temperature 0°C~70°C TA
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FLASH - NAND
Voltage - Supply 2.5V~3.6V
Memory Size 1.5Tb 192G x 8
Memory Type Non-Volatile
Memory Format FLASH
Memory Interface Parallel
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $73.34700 $73.347
MT29E1HT08ELHBBG1-3ES:B TR Product Details

MT29E1HT08ELHBBG1-3ES:B TR Overview


A Non-Volatile-type memory can be classified as the memory type of this device. It comes in a Tape & Reel (TR). 1.5Tb 192G x 8 is the chip's memory size. FLASH-format memory is used in this device, which is a mainstream design. This device has an extended operating temperature range of 0°C~70°C TA, so it's perfect for a wide range of demanding applications. The supply voltage can be up to 2.5V~3.6V.

MT29E1HT08ELHBBG1-3ES:B TR Features



MT29E1HT08ELHBBG1-3ES:B TR Applications


There are a lot of Micron Technology Inc. MT29E1HT08ELHBBG1-3ES:B TR Memory applications.

  • personal digital assistants
  • nonvolatile BIOS memory
  • eSRAM
  • mainframes
  • personal computers
  • Cache memory
  • printers
  • workstations,
  • hard disk drive (HDD)
  • cell phones

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