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MT29E3T08EUHBBM4-3:B

MT29E3T08EUHBBM4-3:B

MT29E3T08EUHBBM4-3:B

Micron Technology Inc.

Memory IC

SOT-23

MT29E3T08EUHBBM4-3:B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Operating Temperature 0°C~70°C TA
Packaging Tray
Part Status Not For New Designs
Technology FLASH - NAND
Voltage - Supply 2.5V~3.6V
Memory Size 3Tb 384G x 8
Memory Type Non-Volatile
Clock Frequency 333MHz
Memory Format FLASH
Memory Interface Parallel
Pricing & Ordering
Quantity Unit Price Ext. Price
1,120 $253.39560 $253.3956
MT29E3T08EUHBBM4-3:B Product Details

MT29E3T08EUHBBM4-3:B Overview


There is a Non-Volatile memory type associated with this device. There is a Tray case available. There is 3Tb 384G x 8 of memory on the chip. There is a mainstream memory format used by this device, which is called FLASH-format memory. 0°C~70°C TA is an extended operating temperature range, making this device ideal for demanding applications. A voltage of 2.5V~3.6V is possible to be applied to the supply. A clock frequency rotation within 333MHz is used for the ic memory chip to rotate data.

MT29E3T08EUHBBM4-3:B Features



MT29E3T08EUHBBM4-3:B Applications


There are a lot of Micron Technology Inc. MT29E3T08EUHBBM4-3:B Memory applications.

  • printers
  • nonvolatile BIOS memory
  • embedded logic
  • servers
  • mainframes
  • eSRAM
  • cell phones
  • data buffer
  • networking
  • supercomputers

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