MT29E4T08EYHBBG9-3ES:B Overview

There is a Non-Volatile memory type associated with this device. It comes in a Tray. There is an 4Tb 512G x 8 memory capacity on the chip. This device uses a FLASH-format memory, which is of mainstream design. 0°C~70°C TA is an extended operating temperature range, making this device ideal for demanding applications. A voltage of 2.5V~3.6V can be supplied to memory ics. In the memory, there is a clock frequency rotation that ranges 333MHz.

MT29E4T08EYHBBG9-3ES:B Features

MT29E4T08EYHBBG9-3ES:B Applications

There are a lot of Micron Technology Inc. MT29E4T08EYHBBG9-3ES:B Memory applications.

• servers
• cell phones
• networks
• Cache memory
• telecommunications
• embedded logic
• personal computers
• main computer memory
• multimedia computers
• eSRAM