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MT29F3T08EUCBBM4-37ES:B TR

MT29F3T08EUCBBM4-37ES:B TR

MT29F3T08EUCBBM4-37ES:B TR

Micron Technology Inc.

Memory IC

SOT-23

MT29F3T08EUCBBM4-37ES:B TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Operating Temperature 0°C~70°C TA
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FLASH - NAND
Voltage - Supply 2.7V~3.6V
Memory Size 3Tb 384G x 8
Memory Type Non-Volatile
Clock Frequency 267MHz
Memory Format FLASH
Memory Interface Parallel
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
MT29F3T08EUCBBM4-37ES:B TR Product Details

MT29F3T08EUCBBM4-37ES:B TR Overview


There is a Non-Volatile memory type associated with this device. It is available in a case with a Tape & Reel (TR) shape. The memory size of the chip is 3Tb 384G x 8 Mb. There is a mainstream memory format used by this device, which is called FLASH-format memory. Due to its wide temperature range of 0°C~70°C TA, this device is well suited to a wide range of applications that require high performance. A supply voltage of 2.7V~3.6V can be applied to it. In this memory, the clock frequency rotation is within an 267MHz range.

MT29F3T08EUCBBM4-37ES:B TR Features



MT29F3T08EUCBBM4-37ES:B TR Applications


There are a lot of Micron Technology Inc. MT29F3T08EUCBBM4-37ES:B TR Memory applications.

  • DVD disk buffer
  • graphics card
  • cell phones
  • eDRAM
  • personal digital assistants
  • main computer memory
  • supercomputers
  • multimedia computers
  • hard disk drive (HDD)
  • Camcorders

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