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MT29F3T08EUHBBM4-3R:B TR

MT29F3T08EUHBBM4-3R:B TR

MT29F3T08EUHBBM4-3R:B TR

Micron Technology Inc.

Memory IC

SOT-23

MT29F3T08EUHBBM4-3R:B TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Operating Temperature 0°C~70°C TA
Packaging Tape & Reel (TR)
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FLASH - NAND
Voltage - Supply 2.5V~3.6V
Memory Size 3Tb 384G x 8
Memory Type Non-Volatile
Clock Frequency 333MHz
Memory Format FLASH
Memory Interface Parallel
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
MT29F3T08EUHBBM4-3R:B TR Product Details

MT29F3T08EUHBBM4-3R:B TR Overview


As far as its memory type goes, it falls into the Non-Volatile category. The case comes in Tape & Reel (TR) size. There is 3Tb 384G x 8 of memory on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. The supply voltage can be up to 2.5V~3.6V. It is important to note that the memory has a clock frequency rotation within the range of 333MHz.

MT29F3T08EUHBBM4-3R:B TR Features



MT29F3T08EUHBBM4-3R:B TR Applications


There are a lot of Micron Technology Inc. MT29F3T08EUHBBM4-3R:B TR Memory applications.

  • eSRAM
  • printers
  • eDRAM
  • Camcorders
  • graphics card
  • servers
  • cell phones
  • Cache memory
  • telecommunications
  • mainframes

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