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MT29F4G08ABADAWP-ITX:D TR

MT29F4G08ABADAWP-ITX:D TR

MT29F4G08ABADAWP-ITX:D TR

Micron Technology Inc.

Memory IC MT29F4G08 18.4mm mm

SOT-23

MT29F4G08ABADAWP-ITX:D TR Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724, 18.40mm Width)
Surface Mount YES
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 48
Technology FLASH - NAND
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.5mm
Base Part Number MT29F4G08
JESD-30 Code R-PDSO-G48
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 4Gb 512M x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Memory Format FLASH
Memory Interface Parallel
Organization 512MX8
Memory Width 8
Memory Density 4294967296 bit
Programming Voltage 3.3V
Height Seated (Max) 1.2mm
Length 18.4mm
Width 12mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.530000 $6.53
10 $6.160377 $61.60377
100 $5.811677 $581.1677
500 $5.482714 $2741.357
1000 $5.172372 $5172.372
MT29F4G08ABADAWP-ITX:D TR Product Details

MT29F4G08ABADAWP-ITX:D TR Overview


A Non-Volatile-type memory can be classified as the memory type of this device. The case comes in the Tape & Reel (TR) style. Embedded in the 48-TFSOP (0.724, 18.40mm Width) case, memory ics is a single file. On the chip, there is an 4Gb 512M x 8 memory, which is the size of the chip's memory. This device utilizes a FLASH format memory which is of mainstream design. Due to its wide temperature range of -40°C~85°C TA, this device is well suited to a wide range of applications that require high performance. A voltage of 2.7V~3.6V can be supplied to memory ics. The recommended mounting type for memory ics is Surface Mount. The chip is terminated with 48 terminations. It supports up to 1 functions for comprehensive operation. A voltage of 3.3V is required for the operation of this memory device. To select similar parts, many people use the device's base part number MT29F4G08. A programming voltage of 3.3V is required to alter the state of certain nonvolatile memory arrays.

MT29F4G08ABADAWP-ITX:D TR Features


Package / Case: 48-TFSOP (0.724, 18.40mm Width)

MT29F4G08ABADAWP-ITX:D TR Applications


There are a lot of Micron Technology Inc. MT29F4G08ABADAWP-ITX:D TR Memory applications.

  • personal digital assistants
  • hard disk drive (HDD)
  • mainframes
  • nonvolatile BIOS memory
  • printers
  • embedded logic
  • networks
  • telecommunications
  • eSRAM
  • servers

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