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MT29F4T08EYCBBG9-37ES:B TR

MT29F4T08EYCBBG9-37ES:B TR

MT29F4T08EYCBBG9-37ES:B TR

Micron Technology Inc.

Memory IC

SOT-23

MT29F4T08EYCBBG9-37ES:B TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Operating Temperature 0°C~70°C TA
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FLASH - NAND
Voltage - Supply 2.7V~3.6V
Memory Size 4Tb 512G x 8
Memory Type Non-Volatile
Clock Frequency 267MHz
Memory Format FLASH
Memory Interface Parallel
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $193.95900 $193.959
MT29F4T08EYCBBG9-37ES:B TR Product Details

MT29F4T08EYCBBG9-37ES:B TR Overview


Non-Volatile is the type of memory it has. Tape & Reel (TR)-cases are available. 4Tb 512G x 8 is the chip's memory size. This device utilizes a FLASH format memory which is of mainstream design. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V volts. It is important to note that the memory has a clock frequency rotation within the range of 267MHz.

MT29F4T08EYCBBG9-37ES:B TR Features



MT29F4T08EYCBBG9-37ES:B TR Applications


There are a lot of Micron Technology Inc. MT29F4T08EYCBBG9-37ES:B TR Memory applications.

  • telecommunications
  • main computer memory
  • cell phones
  • Camcorders
  • Cache memory
  • multimedia computers
  • personal computers
  • mainframes
  • hard disk drive (HDD)
  • networks

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