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MT4HTF6464HZ-800H1

MT4HTF6464HZ-800H1

MT4HTF6464HZ-800H1

Micron Technology Inc.

DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM

SOT-23

MT4HTF6464HZ-800H1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Socket
Package / Case 200-SODIMM
Number of Pins 200
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 200
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature SELF REFRESH; WD-MAX
Subcategory DRAMs
Technology CMOS
Terminal Position ZIG-ZAG
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 0.6mm
[email protected] Reflow Temperature-Max (s) 30
Operating Supply Voltage 1.8V
Number of Elements 4
Temperature Grade COMMERCIAL
Max Supply Voltage 1.9V
Min Supply Voltage 1.7V
Memory Size 512MB
Number of Ports 1
Speed 800MT/s
Memory Type DDR2 SDRAM
Supply Current-Max 1.76mA
Access Time 900 ns
Data Bus Width 64b
Output Characteristics 3-STATE
Memory Width 64
Standby Current-Max 0.028A
Max Frequency 800MHz
I/O Type COMMON
Refresh Cycles 8192
Height Seated (Max) 30.15mm
Length 67.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $84.611400 $84.6114
10 $79.822075 $798.22075
100 $75.303845 $7530.3845
500 $71.041363 $35520.6815
1000 $67.020154 $67020.154

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