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MT53D256M64D4NY-046 XT:B

MT53D256M64D4NY-046 XT:B

MT53D256M64D4NY-046 XT:B

Micron Technology Inc.

Memory IC

SOT-23

MT53D256M64D4NY-046 XT:B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Operating Temperature -30°C~105°C TC
Packaging Tray
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology SDRAM - Mobile LPDDR4
Voltage - Supply 1.1V
Memory Size 16Gb 256M x 64
Memory Type Volatile
Clock Frequency 2133MHz
Memory Format DRAM
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
MT53D256M64D4NY-046 XT:B Product Details

MT53D256M64D4NY-046 XT:B Overview


Volatile is its memory type. Tray-cases are available. There is 16Gb 256M x 64 of memory on the chip. There is a mainstream memory format used by this device, which is called DRAM-format memory. Featuring an extended operating temperature range of -30°C~105°C TC, this device allows it to be used in a variety of demanding applications. A supply voltage of 1.1V can be applied to it. In the memory, there is a clock frequency rotation that ranges 2133MHz.

MT53D256M64D4NY-046 XT:B Features



MT53D256M64D4NY-046 XT:B Applications


There are a lot of Micron Technology Inc. MT53D256M64D4NY-046 XT:B Memory applications.

  • networks
  • multimedia computers
  • printers
  • eDRAM
  • workstations,
  • nonvolatile BIOS memory
  • eSRAM
  • cell phones
  • servers
  • main computer memory

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