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MT53D512M64D4NY-046 XT ES:E

MT53D512M64D4NY-046 XT ES:E

MT53D512M64D4NY-046 XT ES:E

Micron Technology Inc.

Memory IC

SOT-23

MT53D512M64D4NY-046 XT ES:E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Operating Temperature -30°C~105°C TC
Packaging Box
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SDRAM - Mobile LPDDR4
Voltage - Supply 1.1V
Memory Size 32Gb 512M x 64
Memory Type Volatile
Clock Frequency 2133MHz
Memory Format DRAM
Pricing & Ordering
Quantity Unit Price Ext. Price
MT53D512M64D4NY-046 XT ES:E Product Details

MT53D512M64D4NY-046 XT ES:E Overview


There is a Volatile memory type associated with this device. You can get memory ics in a Box case. 32Gb 512M x 64 is the chip's memory size. The device uses a mainstream DRAM-format memory. Featuring an extended operating temperature range of -30°C~105°C TC, this device allows it to be used in a variety of demanding applications. It is supplied votage within 1.1V. A clock frequency rotation within 2133MHz is used for the ic memory chip to rotate data.

MT53D512M64D4NY-046 XT ES:E Features



MT53D512M64D4NY-046 XT ES:E Applications


There are a lot of Micron Technology Inc. MT53D512M64D4NY-046 XT ES:E Memory applications.

  • graphics card
  • telecommunications
  • mainframes
  • cell phones
  • nonvolatile BIOS memory
  • supercomputers
  • eSRAM
  • printers
  • personal digital assistants
  • eDRAM

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