MT8KTF51264HZ-1G6E1

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Manufacturer part number:MT8KTF51264HZ-1G6E1

Manufacturer:Micron Technology Inc.

Description:DRAM Module DDR3L SDRAM 4Gbyte 204SODIMM

Case Package:SOT-23

Datasheet:MT8KTF51264HZ-1G6E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	111 Weeks
Contact Plating	Tin
Mount	Socket
Package / Case	204-SODIMM
Number of Pins	204
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	204
Max Operating Temperature	70°C
Min Operating Temperature	0°C
Subcategory	DRAMs
Technology	CMOS
Terminal Position	DUAL
Supply Voltage	1.35V
Terminal Pitch	0.6mm
Operating Supply Voltage	1.35V
Number of Elements	8
Temperature Grade	COMMERCIAL
Max Supply Voltage	1.45V
Min Supply Voltage	1.283V
Memory Size	4GB
Speed	1600MT/s
Memory Type	DDR3L SDRAM
Supply Current-Max	1.76mA
Data Bus Width	64b
Organization	512MX64
Output Characteristics	3-STATE
Memory Width	64
Standby Current-Max	0.144A
Max Frequency	1.6GHz
I/O Type	COMMON
Radiation Hardening	No
RoHS Status	ROHS3 Compliant