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1N4153-1JANTXV

1N4153-1JANTXV

1N4153-1JANTXV

Microsemi

Bag

SOT-23

1N4153-1JANTXV Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 75
Peak Reverse Repetitive Voltage (V) 50
Maximum Continuous Forward Current (A) 0.15
Peak Non-Repetitive Surge Current (A) 2
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.05
Peak Reverse Recovery Time (ns) 4
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Standard Package Name DO-204-AH
Supplier Package DO-35
Mounting Through Hole
Package Length 5.08(Max)
PCB changed 2
Lead Shape Through Hole
PackagingBag
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
Diameter 2.29(Max)
RoHS StatusRoHS non-compliant
In-Stock:2481 items

1N4153-1JANTXV Product Details

1N4153-1JANTXV Overview


Datasheets indicate [email protected] as the peak forward voltage.RF diode consumes about 0.15 continuous forward current at any given time.RF diode must be operated wRF diodeh a DC reverse voltage less than 75 V.

1N4153-1JANTXV Features


the forward peak voltage is [email protected]


1N4153-1JANTXV Applications


There are a lot of Microsemi
1N4153-1JANTXV applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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