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1N458AE3

1N458AE3

1N458AE3

Microsemi

SOT-23

1N458AE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Peak Reverse Repetitive Voltage (V) 150
Maximum Continuous Forward Current (A) 0.165
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 1
Maximum Power Dissipation (mW) 500
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Commercial
AEC Qualified No
Standard Package Name DO-204-AH
Supplier Package DO-35
Military No
Mounting Through Hole
Package Length 5.08(Max)
PCB changed 2
Lead Shape Through Hole
Type Switching Diode
Pin Count2
Configuration Single
Diameter 2.29(Max)
RoHS StatusYes with exemptions
In-Stock:2234 items

1N458AE3 Product Details

1N458AE3 Overview


According to the datasheets, the peak forward voltage is [email protected] volts.RF diode consumes approximately 0.165 in continuous forward current at any given moment.

1N458AE3 Features


the forward peak voltage is [email protected]


1N458AE3 Applications


There are a lot of Microsemi
1N458AE3 applications of RF diodes.


  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
  • Modulators

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