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1N5552E3

1N5552E3

1N5552E3

Microsemi

Bag

SOT-23

1N5552E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 660
Peak Reverse Repetitive Voltage (V) 600
Maximum Continuous Forward Current (A) 5
Peak Non-Repetitive Surge Current (A) 100
Peak Forward Voltage (V) 1.2@9A
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 2000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Commercial
AEC Qualified No
Standard Package Name Case B
Supplier Package Case B
Military No
Mounting Through Hole
Package Length 3.05(Max)
PCB changed 2
Lead Shape Through Hole
Packaging Bag
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 1.65(Max)
RoHS Status Yes with exemptions
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.73000 $5.73
500 $5.6727 $2836.35
1000 $5.6154 $5615.4
1500 $5.5581 $8337.15
2000 $5.5008 $11001.6
2500 $5.4435 $13608.75
1N5552E3 Product Details

1N5552E3 Overview


In accordance with the datasheets, the forward peak voltage is [email protected] 5 is the maximum continuous forward current consumed by this device at any given time.The DC reverse voltage used for operation must be less than 660.

1N5552E3 Features


the forward peak voltage is 1.2@9A


1N5552E3 Applications


There are a lot of Microsemi
1N5552E3 applications of RF diodes.


  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors

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