1N5809E3

new-10%

Manufacturer part number:1N5809E3

Manufacturer:Microsemi

Description:RECTIFIER DIODE SILICON NOT SPECIFIED AXIAL Bag

Case Package:SOT-23

Datasheet:1N5809E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	NO
Diode Element Material	SILICON
Number of Terminals	2
ECCN (US)	EAR99
HTS	8541.10.00.80
Maximum DC Reverse Voltage (V)	110
Peak Reverse Repetitive Voltage (V)	100
Maximum Continuous Forward Current (A)	6
Peak Non-Repetitive Surge Current (A)	125
Peak Forward Voltage (V)	0.875@4A
Peak Reverse Current (uA)	5
Peak Reverse Recovery Time (ns)	30
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	175
Supplier Temperature Grade	Commercial
AEC Qualified	No
Supplier Package	Case B
Mounting	Through Hole
Package Length	7.62(Max)
PCB changed	2
Package Shape	ROUND
Manufacturer	Microsemi Corporation
Packaging	Bag
JESD-609 Code	e3
Pbfree Code	Yes
Part Status	Active
ECCN Code	EAR99
Type	Switching Diode
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	HIGH RELIABILITY
HTS Code	8541.10.00.80
Technology	AVALANCHE
Terminal Position	AXIAL
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
Pin Count	2
JESD-30 Code	O-LALF-W2
Number of Elements	1
Configuration	Single
Diode Type	RECTIFIER DIODE
Case Connection	ISOLATED
Output Current-Max	3 A
Application	ULTRA FAST RECOVERY POWER
Number of Phases	1
Rep Pk Reverse Voltage-Max	100 V
Non-rep Pk Forward Current-Max	125 A
Reverse Current-Max	5 µA
Reverse Recovery Time-Max	0.03 µs
Diameter	3.61(Max)
RoHS Status	Yes with exemptions