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1N6663USJANTX

1N6663USJANTX

1N6663USJANTX

Microsemi

Bag

SOT-23

1N6663USJANTX Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.70
Maximum DC Reverse Voltage (V) 720
Peak Reverse Repetitive Voltage (V) 600
Maximum Continuous Forward Current (A) 0.5
Peak Non-Repetitive Surge Current (A) 5
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.05
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Standard Package Name MELF
Supplier Package A-MELF
Mounting Surface Mount
Package Height 2.62(Max)
Package Length 5.08(Max)
Package Width 2.62(Max)
PCB changed 2
Lead Shape No Lead
PackagingBag
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
RoHS StatusRoHS non-compliant
In-Stock:2573 items

1N6663USJANTX Product Details

1N6663USJANTX Overview


In the datasheets, [email protected] is stated as the peak forward voltage.A continuous forward current of 0.5 is the maximum consumption of this device.RF diode is necessary to operate the device at a DC reverse voltage below 720.

1N6663USJANTX Features


the forward peak voltage is [email protected]


1N6663USJANTX Applications


There are a lot of Microsemi
1N6663USJANTX applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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