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GRP-ABC-JAN1N5806US

  • GRP-ABC-JAN1N5806US
  • GRP-ABC-JAN1N5806US

GRP-ABC-JAN1N5806US

GRP-ABC-JAN1N5806US

Microsemi

Bag

SOT-23

GRP-ABC-JAN1N5806US Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 160
Peak Reverse Repetitive Voltage (V) 150
Maximum Continuous Forward Current (A) 2.5
Peak Non-Repetitive Surge Current (A) 35
Peak Forward Voltage (V) 0.975
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 25
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
AEC Qualified No
Standard Package Name MELF
Supplier Package A-MELF
Mounting Surface Mount
Package Height 2.62(Max)
Package Length 5.08(Max)
Package Width 2.62(Max)
PCB changed 2
Lead Shape No Lead
Packaging Bag
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
RoHS Status RoHS non-compliant
GRP-ABC-JAN1N5806US Product Details

GRP-ABC-JAN1N5806US Overview


According to the datasheets, the peak forward voltage is 0.975.The maximum continuous forward current that this device consumes at any given time is about 2.5.A DC reverse voltage less than 160 must be used for operation.

GRP-ABC-JAN1N5806US Features


the forward peak voltage is 0.975


GRP-ABC-JAN1N5806US Applications


There are a lot of Microsemi
GRP-ABC-JAN1N5806US applications of RF diodes.


  • Sensor interfaces of security systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables

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