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GRP-B-DATA-JANTX1N5807US

  • GRP-B-DATA-JANTX1N5807US
  • GRP-B-DATA-JANTX1N5807US

GRP-B-DATA-JANTX1N5807US

GRP-B-DATA-JANTX1N5807US

Microsemi

Bag

SOT-23

GRP-B-DATA-JANTX1N5807US Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 60
Peak Reverse Repetitive Voltage (V) 50
Maximum Continuous Forward Current (A) 6
Peak Non-Repetitive Surge Current (A) 125
Peak Forward Voltage (V) 0.875@4A
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 30
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Standard Package Name MELF
Supplier Package E-MELF
Mounting Surface Mount
Package Height 3.76(Max)
Package Length 5.72(Max)
Package Width 3.76(Max)
PCB changed 2
Packaging Bag
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
RoHS Status RoHS non-compliant
GRP-B-DATA-JANTX1N5807US Product Details

GRP-B-DATA-JANTX1N5807US Overview


Datasheets indicate 0.875@4A as the peak forward voltage.RF diode consumes about 6 continuous forward current at any given time.RF diode must be operated wRF diodeh a DC reverse voltage less than 60 V.

GRP-B-DATA-JANTX1N5807US Features


the forward peak voltage is 0.875@4A


GRP-B-DATA-JANTX1N5807US Applications


There are a lot of Microsemi
GRP-B-DATA-JANTX1N5807US applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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