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GRP-DATA-JANS1N5616US

GRP-DATA-JANS1N5616US

GRP-DATA-JANS1N5616US

Microsemi

Waffle

SOT-23

GRP-DATA-JANS1N5616US Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 440
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 1@Ta=55C
Peak Non-Repetitive Surge Current (A) 30
Peak Forward Voltage (V) 1.3@3A
Peak Reverse Current (uA) 0.5
Peak Reverse Recovery Time (ns) 2000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Temperature Grade Military
Standard Package Name MELF
Supplier Package A-MELF
Mounting Surface Mount
Package Height 2.62(Max)
Package Length 5.08(Max)
Package Width 2.62(Max)
PCB changed 2
Lead Shape No Lead
Packaging Waffle
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
RoHS Status RoHS non-compliant
GRP-DATA-JANS1N5616US Product Details

GRP-DATA-JANS1N5616US Overview


In the datasheets, 1.3@3A is stated as the peak forward voltage.A continuous forward current of 1@Ta=55C is the maximum consumption of this device.RF diode is necessary to operate the device at a DC reverse voltage below 440.

GRP-DATA-JANS1N5616US Features


the forward peak voltage is 1.3@3A


GRP-DATA-JANS1N5616US Applications


There are a lot of Microsemi
GRP-DATA-JANS1N5616US applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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