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JAN1N3070UR-1

JAN1N3070UR-1

JAN1N3070UR-1

Microsemi

Bag

SOT-23

JAN1N3070UR-1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
HTS 8541.10.00.70
Maximum DC Reverse Voltage (V) 200
Peak Reverse Repetitive Voltage (V) 175
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 2
Peak Forward Voltage (V) 1
Peak Reverse Current (uA) 0.1
Maximum Power Dissipation (mW) 500
Peak Reverse Recovery Time (ns) 50
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Standard Package Name SOD-80
Supplier Package DO-213AA
Mounting Surface Mount
Package Length 3.7(Max)
PCB changed 2
Lead Shape No Lead
Packaging Bag
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 1.7(Max)
RoHS Status RoHS non-compliant
JAN1N3070UR-1 Product Details

JAN1N3070UR-1 Overview


In the datasheets, 1 is stated as the peak forward voltage.A continuous forward current of 0.1 is the maximum consumption of this device.RF diode is necessary to operate the device at a DC reverse voltage below 200.

JAN1N3070UR-1 Features


the forward peak voltage is 1


JAN1N3070UR-1 Applications


There are a lot of Microsemi
JAN1N3070UR-1 applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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