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JANS1N3595US-HSD

JANS1N3595US-HSD

JANS1N3595US-HSD

Microsemi

SOT-23

JANS1N3595US-HSD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.70
Maximum Continuous Forward Current (A) 0.2
Peak Non-Repetitive Surge Current (A) 4
Peak Forward Voltage (V) 1
Peak Reverse Current (uA) 0.001@125V
Peak Reverse Recovery Time (ns) 3000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Military
Standard Package Name MELF
Supplier Package B-MELF
Mounting Surface Mount
Package Height 2.16(Max)
Package Length 4.95(Max)
Package Width 2.16(Max)
PCB changed 2
Lead Shape No Lead
Type Switching Diode
Pin Count2
Configuration Single
RoHS StatusRoHS non-compliant
In-Stock:4688 items

JANS1N3595US-HSD Product Details

JANS1N3595US-HSD Overview


According to the datasheets, the peak forward voltage is 1.The maximum continuous forward current that this device consumes at any given time is about 0.2.

JANS1N3595US-HSD Features


the forward peak voltage is 1


JANS1N3595US-HSD Applications


There are a lot of Microsemi
JANS1N3595US-HSD applications of RF diodes.


  • Sensor interfaces of security systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables

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