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JANS1N5618US

  • JANS1N5618US
  • JANS1N5618US

JANS1N5618US

JANS1N5618US

Microsemi

Waffle

SOT-23

JANS1N5618US Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 660
Peak Reverse Repetitive Voltage (V) 600
Maximum Continuous Forward Current (A) 1@Ta=55C
Peak Non-Repetitive Surge Current (A) 30
Peak Forward Voltage (V) 1.3@3A
Peak Reverse Current (uA) 0.5
Peak Reverse Recovery Time (ns) 2000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Temperature Grade Military
Standard Package Name MELF
Supplier Package A-MELF
Mounting Surface Mount
Package Height 2.62(Max)
Package Length 5.08(Max)
Package Width 2.62(Max)
PCB changed 2
Lead Shape No Lead
Packaging Waffle
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
RoHS Status RoHS non-compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $52.56000 $52.56
500 $52.0344 $26017.2
1000 $51.5088 $51508.8
1500 $50.9832 $76474.8
2000 $50.4576 $100915.2
2500 $49.932 $124830
JANS1N5618US Product Details

JANS1N5618US Overview


Datasheets indicate 1.3@3A as the peak forward voltage.RF diode consumes about 1@Ta=55C continuous forward current at any given time.RF diode must be operated wRF diodeh a DC reverse voltage less than 660 V.

JANS1N5618US Features


the forward peak voltage is 1.3@3A


JANS1N5618US Applications


There are a lot of Microsemi
JANS1N5618US applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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