1N3600

new-10%

Manufacturer part number:1N3600

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 50V 200MA DO35

Case Package:SOT-23

Datasheet:1N3600 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	DO-204AH, DO-35, Axial
Number of Pins	2
Diode Element Material	SILICON
Packaging	Bulk
Published	1999
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
Additional Feature	METALLURGICALLY BONDED
HTS Code	8541.10.00.70
Terminal Form	WIRE
Pin Count	2
Number of Elements	1
Power Dissipation-Max	0.5W
Element Configuration	Single
Speed	Small Signal =< 200mA (Io), Any Speed
Diode Type	Standard
Current - Reverse Leakage @ Vr	100nA @ 50V
Voltage - Forward (Vf) (Max) @ If	1V @ 200mA
Case Connection	ISOLATED
Forward Current	300mA
Operating Temperature - Junction	-65°C~175°C
Max Reverse Voltage (DC)	50V
Average Rectified Current	200mA
Reverse Recovery Time	4 ns
Peak Reverse Current	100nA
Max Repetitive Reverse Voltage (Vrrm)	50V
JEDEC-95 Code	DO-7
Peak Non-Repetitive Surge Current	4A
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant