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1N5186

1N5186

1N5186

Microsemi Corporation

DIODE GEN PURP 100V 3A AXIAL

SOT-23

1N5186 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Mounting Type Through Hole
Package / Case B, Axial
PackagingBulk
Published 1997
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 2μA @ 100V
Voltage - Forward (Vf) (Max) @ If 1.5V @ 9A
Operating Temperature - Junction -65°C~175°C
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 3A
Reverse Recovery Time 150ns
RoHS StatusNon-RoHS Compliant
In-Stock:1118 items

Pricing & Ordering

QuantityUnit PriceExt. Price
117$7.93650$928.5705

About 1N5186

The 1N5186 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 100V 3A AXIAL.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 1N5186, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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