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1N5195

1N5195

1N5195

Microsemi Corporation

DIODE GEN PURP 180V 200MA DO35

SOT-23

1N5195 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Additional Feature METALLURGICALLY BONDED
HTS Code 8541.10.00.70
Terminal Position END
Terminal Form WRAP AROUND
Pin Count 2
Number of Elements 1
Power Dissipation-Max 0.5W
Element Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 25nA @ 180V
Voltage - Forward (Vf) (Max) @ If 1V @ 100mA
Case Connection ISOLATED
Forward Current 200mA
Operating Temperature - Junction -65°C~175°C
Max Reverse Voltage (DC) 180V
Average Rectified Current 200mA
Max Repetitive Reverse Voltage (Vrrm) 180V
Peak Non-Repetitive Surge Current 2A
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
117 $7.93650 $928.5705

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