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1N5196UR

1N5196UR

1N5196UR

Microsemi Corporation

DIODE GEN PURP 225V 200MA DO213

SOT-23

1N5196UR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-213AA (Glass)
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 1997
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Additional Feature METALLURGICALLY BONDED
HTS Code 8541.10.00.70
Terminal Position END
Terminal Form WRAP AROUND
Pin Count 2
Number of Elements 1
Power Dissipation-Max 0.5W
Element Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 25nA @ 225V
Voltage - Forward (Vf) (Max) @ If 1V @ 100mA
Case Connection ISOLATED
Forward Current 200mA
Operating Temperature - Junction -65°C~175°C
Max Reverse Voltage (DC) 225V
Average Rectified Current 200mA
Max Repetitive Reverse Voltage (Vrrm) 225V
Peak Non-Repetitive Surge Current 2A
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
105 $8.88000 $932.4

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