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1N6073US

1N6073US

1N6073US

Microsemi Corporation

DIODE GEN PURP 50V 3A D5A

SOT-23

1N6073US Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)
Contact Plating Lead, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SQ-MELF, A
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 155°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.80
Technology AVALANCHE
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Tim[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 50V
Voltage - Forward (Vf) (Max) @ If 2.04V @ 9.4A
Case Connection ISOLATED
Forward Current 3A
Operating Temperature - Junction -65°C~155°C
Output Current-Max 0.85A
Max Reverse Voltage (DC) 50V
Average Rectified Current 3A
Reverse Recovery Time 30 ns
Max Repetitive Reverse Voltage (Vrrm) 50V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $15.98000 $1598

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