1N649UR-1

new-10%

Manufacturer part number:1N649UR-1

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 600V 400MA DO213

Case Package:SOT-23

Datasheet:1N649UR-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Contact Plating	Lead, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DO-213AA (Glass)
Number of Pins	2
Diode Element Material	SILICON
Packaging	Bulk
Published	1997
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	TIN LEAD
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
HTS Code	8541.10.00.70
Terminal Position	END
Terminal Form	WRAP AROUND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
Number of Elements	1
Power Dissipation-Max	0.5W
Element Configuration	Single
Speed	Standard Recovery >500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	50nA @ 600V
Voltage - Forward (Vf) (Max) @ If	1V @ 400mA
Case Connection	ISOLATED
Forward Current	400mA
Operating Temperature - Junction	-65°C~175°C
Output Current-Max	0.4A
Max Reverse Voltage (DC)	600V
Average Rectified Current	400mA
Max Repetitive Reverse Voltage (Vrrm)	600V
RoHS Status	Non-RoHS Compliant