1N6625E3

new-10%

Manufacturer part number:1N6625E3

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 1.1KV 1A AXIAL

Case Package:SOT-23

Datasheet:1N6625E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	A, Axial
Diode Element Material	SILICON
Packaging	Bulk
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	HIGH RELIABILITY
HTS Code	8541.10.00.80
Technology	AVALANCHE
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
JESD-30 Code	O-LALF-W2
Operating Temperature (Max)	175°C
Number of Elements	1
Configuration	SINGLE
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	1μA @ 1000V
Voltage - Forward (Vf) (Max) @ If	1.95V @ 1.5A
Case Connection	ISOLATED
Operating Temperature - Junction	-65°C~150°C
Output Current-Max	1A
Voltage - DC Reverse (Vr) (Max)	1100V
Max Reverse Voltage (DC)	1.1kV
Average Rectified Current	1A
Reverse Recovery Time	80 ns
RoHS Status	RoHS Compliant