2N1893S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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2N1893S Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2002
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Max Power Dissipation
800mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Number of Elements
1
Configuration
SINGLE
Power - Max
3W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
5V @ 15mA, 150mA
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
Collector Base Voltage (VCBO)
120V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$27.379949
$27.379949
10
$25.830141
$258.30141
100
$24.368058
$2436.8058
500
$22.988733
$11494.3665
1000
$21.687484
$21687.484
2N1893S Product Details
2N1893S Overview
This device has a DC current gain of 40 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 5V @ 15mA, 150mA means Ic has reached its maximum value(saturated).In this part, there is a transition frequency of 50MHz.Collector current can be as low as 500mA volts at its maximum.
2N1893S Features
the DC current gain for this device is 40 @ 150mA 10V the vce saturation(Max) is 5V @ 15mA, 150mA a transition frequency of 50MHz
2N1893S Applications
There are a lot of Microsemi Corporation 2N1893S applications of single BJT transistors.