2N3057A Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 500mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.When collector current reaches its maximum, it can reach 1A volts.

2N3057A Features

the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V

2N3057A Applications

There are a lot of Microsemi Corporation 2N3057A applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver