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2N3635UB

2N3635UB

2N3635UB

Microsemi Corporation

2N3635UB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3635UB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
HTS Code 8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position DUAL
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power - Max 1.5W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
Collector Base Voltage (VCBO) 140V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
2N3635UB Product Details

2N3635UB Overview


DC current gain in this device equals 100 @ 50mA 10V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 600mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Maximum collector currents can be below 1A volts.

2N3635UB Features


the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA

2N3635UB Applications


There are a lot of Microsemi Corporation 2N3635UB applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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