2N3635UB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N3635UB Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power - Max
1.5W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Collector Base Voltage (VCBO)
140V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
2N3635UB Product Details
2N3635UB Overview
DC current gain in this device equals 100 @ 50mA 10V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 600mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Maximum collector currents can be below 1A volts.
2N3635UB Features
the DC current gain for this device is 100 @ 50mA 10V the vce saturation(Max) is 600mV @ 5mA, 50mA
2N3635UB Applications
There are a lot of Microsemi Corporation 2N3635UB applications of single BJT transistors.