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2N5002

2N5002

2N5002

Microsemi Corporation

2N5002 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5002 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Stud
Package / Case TO-59
Number of Pins 3
Packaging Bulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation 2W
Case Connection ISOLATED
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 5A
Transition Frequency 60MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5.5V
DC Current Gain-Min (hFE) 20
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $137.85800 $13785.8
2N5002 Product Details

2N5002 Overview


Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5.5V.The part has a transition frequency of 60MHz.A maximum collector current of 5A volts is possible.

2N5002 Features


the emitter base voltage is kept at 5.5V
a transition frequency of 60MHz

2N5002 Applications


There are a lot of Microsemi Corporation 2N5002 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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