2N5002 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N5002 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Stud
Package / Case
TO-59
Number of Pins
3
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Power Dissipation
2W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
5A
Transition Frequency
60MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5.5V
DC Current Gain-Min (hFE)
20
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$137.85800
$13785.8
2N5002 Product Details
2N5002 Overview
Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5.5V.The part has a transition frequency of 60MHz.A maximum collector current of 5A volts is possible.
2N5002 Features
the emitter base voltage is kept at 5.5V a transition frequency of 60MHz
2N5002 Applications
There are a lot of Microsemi Corporation 2N5002 applications of single BJT transistors.