2N6770

new-10%

Manufacturer part number:2N6770

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 500V 12A TO-204AE

Case Package:SOT-23

Datasheet:2N6770 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-204AE
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	TIN LEAD OVER NICKEL
Additional Feature	HIGH RELIABILITY
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	PIN/PEG
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
JESD-30 Code	O-MBFM-P2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	4W Ta 150W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	500m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Rise Time	190ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.5Ohm
Pulsed Drain Current-Max (IDM)	48A
DS Breakdown Voltage-Min	500V
RoHS Status	Non-RoHS Compliant