2N6770T1

new-10%

Manufacturer part number:2N6770T1

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 500V 12A TO-254AA

Case Package:SOT-23

Datasheet:2N6770T1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-254-3, TO-254AA (Straight Leads)
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	PIN/PEG
Pin Count	3
JESD-30 Code	S-XSFM-P3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	4W Ta 150W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	500m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	12A
Drain-source On Resistance-Max	0.5Ohm
DS Breakdown Voltage-Min	500V
RoHS Status	Non-RoHS Compliant