2N6790

new-10%

Manufacturer part number:2N6790

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 200V TO-205AF

Case Package:SOT-23

Datasheet:2N6790 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AF Metal Can
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	WIRE
Reach Compliance Code	not_compliant
JESD-30 Code	O-MBCY-W3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	800mW Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	800m Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	3.5A Tc
Gate Charge (Qg) (Max) @ Vgs	14.3nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	3.5A
Drain-source On Resistance-Max	0.85Ohm
Pulsed Drain Current-Max (IDM)	14A
DS Breakdown Voltage-Min	200V
RoHS Status	Non-RoHS Compliant