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APT5012JN

APT5012JN

APT5012JN

Microsemi Corporation

MOSFET N-CH 500V 43A ISOTOP

SOT-23

APT5012JN Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Operating Temperature -55°C~150°C TJ
Packaging Tray
Published 2012
Series POWER MOS IV®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Pin Count 4
Number of Elements 1
Power Dissipation-Max 520W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 120m Ω @ 21.5A, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Gate Charge (Qg) (Max) @ Vgs 370nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 43A

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