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APT60GT60JRDQ3

APT60GT60JRDQ3

APT60GT60JRDQ3

Microsemi Corporation

APT60GT60JRDQ3 datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi Corporation stock available on our website

SOT-23

APT60GT60JRDQ3 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 38 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Supplier Device Package ISOTOP®
Published 1999
Series Thunderbolt IGBT®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Max Power Dissipation 379W
Current Rating 105A
Configuration Single
Element Configuration Single
Power - Max 379W
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 105A
Current - Collector Cutoff (Max) 330μA
Collector Emitter Breakdown Voltage 600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 105A
Input Capacitance 3.1nF
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 3.1nF @ 25V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
APT60GT60JRDQ3 Product Details

APT60GT60JRDQ3 Description


The  APT60GT60JRDQ3 is a thunderbolt IGBT, a new generation of high voltage power IGBT. 



APT60GT60JRDQ3 Features


  • Low Forward Voltage Drop 

  • High Freq. Switching to 100KHz

  • Low Tail Current 

  • Ultra Low Leakage Current

  • RBSOA and SCSOA Rated



APT60GT60JRDQ3 Applications


  • Industrial


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