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APT70SM70S

APT70SM70S

APT70SM70S

Microsemi Corporation

POWER MOSFET - SIC

SOT-23

APT70SM70S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration Single
Power Dissipation-Max 220W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 32.5A, 20V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 65A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 20V
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Continuous Drain Current (ID) 65A
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.09Ohm
Pulsed Drain Current-Max (IDM) 117A
DS Breakdown Voltage-Min 700V
RoHS Status RoHS Compliant

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