APTC60SKM24T1G

new-10%

Manufacturer part number:APTC60SKM24T1G

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 600V 95A SP1

Case Package:SOT-23

Datasheet:APTC60SKM24T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Contact Plating	Tin
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP1
Number of Pins	1
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Series	CoolMOS™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	THROUGH-HOLE
Pin Count	12
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max	462W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	CHOPPER
Rds On (Max) @ Id, Vgs	24m Ω @ 47.5A, 10V
Vgs(th) (Max) @ Id	3.9V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	14400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	95A Tc
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Rise Time	30ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	95A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.024Ohm
Pulsed Drain Current-Max (IDM)	260A
DS Breakdown Voltage-Min	600V
Radiation Hardening	No
RoHS Status	RoHS Compliant